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D638 PDF Datasheet

The D638 is NPN Transistor - 2sd638. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 D638
NPN Transistor - 2SD638

Transistor 2SD638, 2SD639 Silicon NPN epitaxial planer type For medium-power general amplification Complementary to 2SB643 and 2SB644 s Features q Low collector to emitter saturation voltage VCE(sat). q M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. s Absolute Maximum Ratings (Ta=25˚C) Parameter Colle

Panasonic Semiconductor
Panasonic Semiconductor
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Recommended search results related to D638

Part No Description ( Function) Manufacturers PDF
2SD638   Silicon NPN epitaxial planer type(For medium-power general amplification)

Transistor 2SD638, 2SD639 Silicon NPN epitaxial planer type For medium-power general amplification Complementary to 2SB643 and 2SB644 6.9±0.1 2.5±0.1 1.0 Unit: mm 2.4±0.2 2.0±0.2 3.5±0.1 q q Low collector to emitter saturation voltage VCE(sat). M type package allowing e

Panasonic Semiconductor
Panasonic Semiconductor
datasheet pdf
2SD638   Silicon PNP epitaxial planer type(For low-power general amplification)

Transistor 2SD638, 2SD639 Silicon NPN epitaxial planer type For medium-power general amplification Complementary to 2SB643 and 2SB644 6.9±0.1 2.5±0.1 1.0 Unit: mm 2.4±0.2 2.0±0.2 3.5±0.1 q q Low collector to emitter saturation voltage VCE(sat). M type package allowing e

Panasonic Semiconductor
Panasonic Semiconductor
datasheet pdf
2SD638   Silicon NPN epitaxial planar type

www.DataSheet4U.net Transistors 2SD0638 (2SD638) Silicon NPN epitaxial planar type For medium-power general amplification Complementary to 2SB0643 (2SB643) (0.4) (1.5) (1.5) Unit: mm 6.9±0.1 2.5±0.1 (1.0) 2.0±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector

Panasonic Semiconductor
Panasonic Semiconductor
datasheet pdf
BD638   Silicon PNP Power Transistor

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification BD638 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= -25mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.) ·Complement to Type BD637 APPLICATIONS ·Designed for amplifier an

Inchange Semiconductor
Inchange Semiconductor
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BD638   PNP Epibase Power Transistor

Texas
Texas
datasheet pdf

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