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D5N40 Datasheet PDF Search Results

No Part number Description ( Function ) Manufacturers PDF
1 D5N40
HFD5N40

HFD5N40 / HFU5N40 July 2005 HFD5N40 / HFU5N40 400V N-Channel MOSFET BVDSS = 400 V RDS(on) typ = 1.27 Ω ID = 3.4 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 13 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.27 Ω (Typ.) @VGS=10V  100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD5N40 1 2 3 HFU5N40 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current

SemiHow - D5N40 pdf datasheet
SemiHow
D5N40 datasheet pdf

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It can be published by the manufacturer to help people choose products or to help use the products.


D5N Data sheets

No Description ( Function) Manufacturers PDF
D5N40   HFD5N40

HFD5N40 / HFU5N40 July 2005 HFD5N40 / HFU5N40 400V N-Channel MOSFET BVDSS = 400 V RDS(on) typ = 1.27 Ω ID = 3.4 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent S

SemiHow
SemiHow
datasheet pdf
D5NK50Z   STD5NK50Z

STB5NK50Z-1 - STP5NK50ZFP STP5NK50Z - STD5NK50Z - STD5NK50Z-1 N-CHANNEL500V-1.22Ω-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP5NK50Z STP5NK50ZFP STD5NK50Z STD5NK50Z-1 STB5BK50Z-1 500 V 500 V 500 V

STMicroelectronics
STMicroelectronics
datasheet pdf
D5N50   5A N-Channel MOSFET

AOD5N50 500V,5A N-Channel MOSFET General Description Product Summary The AOD5N50 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and C

Alpha & Omega Semiconductors
Alpha & Omega Semiconductors
datasheet pdf
D5NM50   STD5NM50

STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK MDmesh™Power MOSFET TYPE VDSS RDS(on) ID STD5NM50 STD5NM50-1 500V 500V <0.8Ω <0.8Ω 7.5 A 7.5 A n TYPICAL RDS(on) = 0.7Ω n HIGH dv/dt AND AVALANCHE CAPABILITIES n 100% AVALANCHE TESTED n LOW INPUT CAPACI

STMicroelectronics
STMicroelectronics
datasheet pdf
D5NM60   STD5NM60

STD5NM60 STB8NM60 - STP8NM60 N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK Features Type STD5NM60 STD5NM60-1 STB8NM60 STP8NM60 STP8NM60FP VDSS 650 V 650 V 650 V 650 V 650 V RDS(on) <1Ω <1Ω <1Ω <1Ω <1Ω ID 5A 5A 5A 8A

STMicroelectronics
STMicroelectronics
datasheet pdf
D5N50F   N-Channel MOSFET

FDD5N50F N-Channel MOSFET, FRFET FDD5N50F N-Channel MOSFET, FRFET 500V, 3.5A, 1.55Ω Features • RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 1.75A • Low gate charge ( Typ. 11nC) • Low Crss ( Typ. 5pF) • Fast switching • 100% avalanche tested • Improved dv/dt capabilit

Fairchild Semiconductor
Fairchild Semiconductor
datasheet pdf


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