D5N40 Datasheet PDF Search Results |
| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | D5N40 | HFD5N40 HFD5N40 / HFU5N40 July 2005 HFD5N40 / HFU5N40 400V N-Channel MOSFET BVDSS = 400 V RDS(on) typ = 1.27 Ω ID = 3.4 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.27 Ω (Typ.) @VGS=10V 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD5N40 1 2 3 HFU5N40 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current |
 SemiHow |
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The datasheet is usually used for technical communication to describe technical characteristics of an item or product. |
D5N Data sheets |
| No | Description ( Function) | Manufacturers | |
| D5N40 | HFD5N40 HFD5N40 / HFU5N40 July 2005 HFD5N40 / HFU5N40 400V N-Channel MOSFET BVDSS = 400 V RDS(on) typ = 1.27 Ω ID = 3.4 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent S |
SemiHow |
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| D5NK50Z | STD5NK50Z STB5NK50Z-1 - STP5NK50ZFP STP5NK50Z - STD5NK50Z - STD5NK50Z-1 N-CHANNEL500V-1.22Ω-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP5NK50Z STP5NK50ZFP STD5NK50Z STD5NK50Z-1 STB5BK50Z-1 500 V 500 V 500 V |
 STMicroelectronics |
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| D5N50 | 5A N-Channel MOSFET AOD5N50 500V,5A N-Channel MOSFET General Description Product Summary The AOD5N50 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and C |
 Alpha & Omega Semiconductors |
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| D5NM50 | STD5NM50 STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK MDmesh™Power MOSFET TYPE VDSS RDS(on) ID STD5NM50 STD5NM50-1 500V 500V <0.8Ω <0.8Ω 7.5 A 7.5 A n TYPICAL RDS(on) = 0.7Ω n HIGH dv/dt AND AVALANCHE CAPABILITIES n 100% AVALANCHE TESTED n LOW INPUT CAPACI |
STMicroelectronics |
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| D5NM60 | STD5NM60 STD5NM60 STB8NM60 - STP8NM60 N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK Features Type STD5NM60 STD5NM60-1 STB8NM60 STP8NM60 STP8NM60FP VDSS 650 V 650 V 650 V 650 V 650 V RDS(on) <1Ω <1Ω <1Ω <1Ω <1Ω ID 5A 5A 5A 8A |
STMicroelectronics |
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| D5N50F | N-Channel MOSFET FDD5N50F N-Channel MOSFET, FRFET FDD5N50F N-Channel MOSFET, FRFET 500V, 3.5A, 1.55Ω Features • RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 1.75A • Low gate charge ( Typ. 11nC) • Low Crss ( Typ. 5pF) • Fast switching • 100% avalanche tested • Improved dv/dt capabilit |
 Fairchild Semiconductor |
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