|
|
Datasheet D45C8 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | D45C8 | POWER TRANSISTORS(4A/30-80V/30W) A
A
A
|  Mospec Semiconductor | transistor |
| 2 | D45C8 | COMPLEMENTARY SILICON POWER TRANSISTORS |  Boca Semiconductor Corporation | transistor |
| 3 | D45C8 | PNP Power Amplifier D45C8 PNP Power Amplifier
April 2005
D45C8
PNP Power Amplifier
• Sourced from process 5P.
1
TO-220
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings
Symbol
VCEO IC TJ, TSTG Collector-Emitter Voltage Collector Current
Ta = 25°C unless otherwise noted
Parameter
- Continuous
Value
-6 |  Fairchild Semiconductor | amplifier |
| 4 | D45C8 | Trans GP BJT PNP 60V 4A 3-Pin(3+Tab) TO-220AB Bulk |  New Jersey Semiconductor | data |
| 5 | D45C8 | Trans GP BJT PNP 60V 4A 3-Pin(3+Tab) TO-220AB Bulk | New Jersey Semiconductor | data |
D45 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | D4503B | Hex 2 State Buffer ETC buffer | | |
| 2 | D45128163G5 | UPD45128163G5
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD45128441, 45128841, 45128163
128M-bit Synchronous DRAM 4-bank, LVTTL
Description
The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 �  NEC data | | |
| 3 | D45128441G5 | UPD45128441G5 DATA SHEET
MOS INTEGRATED CIRCUIT
µPD45128441, 45128841, 45128163
128M-bit Synchronous DRAM 4-bank, LVTTL
Description
The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 � NEC data | | |
| 4 | D45128841G5 | UPD45128841G5
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD45128441, 45128841, 45128163
128M-bit Synchronous DRAM 4-bank, LVTTL
Description
The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 � NEC data | | |
| 5 | D4515 | Low-frequency amplification shell rated bipolar transistors R
D
2004.01
1/5
2004.01
2/5
(mA)
Ic (A)
10
500mA
450mA 400mA
350mA 300mA 250mA
200mA
5 150mA
100mA
50mA
2
01
-
34
VCE (V)
5
2004.01
3/5
2004.01
4/5
2004.01
5/5
 JILIN SINO transistor | | |
| 6 | D4515 | NPN Transistor ATE transistor | | |
| 7 | D4516161CG5 | UPD4516161CG5
www.Da NEC data | |
| Esta página es del resultado de búsqueda del D45C8. Si pulsa el resultado de búsqueda de D45C8 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |