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Datasheet D3NB50 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 D3NB50   STD3NB50

STD3NB50 N - CHANNEL 500V - 2.5Ω - 3A - IPAK/DPAK PowerMESH™ MOSFET PRELIMINARY DATA TYPE STD3NB50 s s s s s V DSS 500 V R DS(on) < 2.8 Ω ID 3A TYPICAL RDS(on) = 2.5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 2 1 3 1
STMicroelectronics
STMicroelectronics		 datasheet D3NB50 pdf

D3N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
D3N50

AOD3N50

AOD3N50 3A, 500V N-Channel MOSFET General Description The AOD3N50 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along w
 Alpha & Omega Semiconductors
Alpha & Omega Semiconductors		 datasheet pdf - Alpha & Omega Semiconductors
D3N40

AOD3N40

AOD3N40 400V,2.6A N-Channel MOSFET General Description Product Summary The AOD3N40 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications. By providing low RDS(on), Ci
 Alpha & Omega Semiconductors
Alpha & Omega Semiconductors		 datasheet pdf - Alpha & Omega Semiconductors
D3NB50

STD3NB50

STD3NB50 N - CHANNEL 500V - 2.5Ω - 3A - IPAK/DPAK PowerMESH™ MOSFET PRELIMINARY DATA TYPE STD3NB50 s s s s s V DSS 500 V R DS(on) < 2.8 Ω ID 3A TYPICAL RDS(on) = 2.5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MI
 STMicroelectronics
STMicroelectronics		 datasheet pdf - STMicroelectronics


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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