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Datasheet D26 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 21 | D2603 | SILICON NPN TRANSISTOR 2SD2603(3DD2603)
硅 NPN 半导体三极管/SILICON NPN TRANSISTOR
用途：用于一般功率输出放大。
Purpose: Power out amplifier applications.
特点：击穿电压高,饱和压降低。 Features: High VCEO,low V .CE(sat)
极限参数/Absolute maximum ratings(Ta=25℃)
参数符号
� |
 FOSHAN BLUE ROCKET |
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| 20 | D2604 | NPN Transistor - 2SD2604 2SD2604
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
2SD2604
High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications
Unit: mm
• •
High DC current gain: hFE = 2000 (min) Low saturation voltage: VCE (sat) = 1.5 V (max)
Absolute Ma |
 Toshiba Semiconductor |
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| 19 | D2606 | Silicon NPN diffusion planar type Darlington Power Transistors
2SD2606
Silicon NPN diffusion planar type Darlington
For power amplification
Unit: mm
s Features
q Extremely satisfactory linearity of the forward current transfer ratio hFE
q High collector to base voltage VCBO q Wide area of safe operation (ASO) q TO-220(c) type package enabl |
 Panasonic |
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| 18 | D261 | NPN Transistor - 2SD261 Transistors 2SD261
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 USHA |
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