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D2495 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
1 D2495
2SD2495

Equivalent circuit C Darlington 2SD2495 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=110V VEB=5V IC=30mA VCE=4V, IC=5A IC=5A, IB=5mA IC=5A, IB=5mA VCE=12V, IE=–0.5A VCB=10V, f=1MHz 2SD2495 100max 100max 110min 5000min∗ 2.5max 3.0max 60typ 55typ V V 13.0min B (7 0 Ω ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1626) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2495 110 110 5 6 1 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio, Series Regulator and General Purpose (Ta=25°C) Unit External Dimensions FM20(TO220F) 4.0±0

Sanken electric - D2495 pdf datasheet
Sanken electric
D2495 datasheet pdf

The datasheet is usually used for technical communication to describe technical characteristics of an item or product.
It can be published by the manufacturer to help people choose products or to help use the products.


D24 Data sheets

No Description ( Function) Manufacturers PDF
D2499   SILICON DIFFUSED POWER TRANSISTOR

2SD2499 GENERAL DESCRIPTION SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers QUICK

Wing Shing Computer
Wing Shing Computer
datasheet pdf
D2498    2SD2498

2SD2498 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2498 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage Low Saturation Voltage High Speed : VCBO = 1500 V : VCE (sat) = 5 V (Ma

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf
D2499   2SD2499

2SD2499 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2499 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV l High Voltage : VCBO = 1500 V l Low Saturation Voltage : VCE (sat) = 5 V (Max.) l High Speed : tf = 0.3 µs (Typ.) l Bult-in Damper Type l Collector Metal (

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf
D2495    2SD2495

Equivalent circuit C Darlington 2SD2495 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=110V VEB=5V IC=30mA VCE=4V, IC=5A IC=5A, IB=5mA IC=5A, IB=5mA VCE=12V, IE=–0.5A VCB=10V, f=1MHz 2SD2495 100max 100max 110min 5000min∗ 2

Sanken electric
Sanken electric
datasheet pdf
D2494    2SD2494

Equivalent circuit C Darlington 2SD2494 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=110V VEB=5V IC=30mA VCE=4V, IC=5A IC=5A, IB=5mA IC=5A, IB=5mA VCE=12V, IE=–0.5A VCB=10V, f=1MHz 2SD2494 100max 100max 110min 5000min∗ 2

Sanken electric
Sanken electric
datasheet pdf
D2493    2SD2493

Equivalent circuit C Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2493 110 110 5 6 1 60(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SD2493 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB

Sanken electric
Sanken electric
datasheet pdf


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