D2494 PDF Datasheet Search Results |
| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | D2494 | 2SD2494 Equivalent circuit C Darlington 2SD2494 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=110V VEB=5V IC=30mA VCE=4V, IC=5A IC=5A, IB=5mA IC=5A, IB=5mA VCE=12V, IE=–0.5A VCB=10V, f=1MHz 2SD2494 100max 100max 110min 5000min∗ 2.5max 3.0max 60typ 55typ V V 16.2 B (7 0 Ω ) E Silicon NPN Triple Diffused Planar Transistor ( |
 Sanken electric |
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D24 Data sheets |
| Part No | Description ( Function) | Manufacturers | |
| D2499 | SILICON DIFFUSED POWER TRANSISTOR 2SD2499 GENERAL DESCRIPTION SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers QUICK |
 Wing Shing Computer |
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| D2498 | 2SD2498 2SD2498 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2498 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage Low Saturation Voltage High Speed : VCBO = 1500 V : VCE (sat) = 5 V (Ma |
 Toshiba Semiconductor |
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| D2499 | 2SD2499 2SD2499 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2499 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV l High Voltage : VCBO = 1500 V l Low Saturation Voltage : VCE (sat) = 5 V (Max.) l High Speed : tf = 0.3 µs (Typ.) l Bult-in Damper Type l Collector Metal ( |
Toshiba Semiconductor |
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