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Datasheet D2242 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1D2242NPN Transistor, 2SD2242

www.DataSheet.co.kr Power Transistors 2SD2242, 2SD2242A Silicon NPN triple diffusion planar type Darlington For power amplification Unit: mm 5.0±0.1 10.0±0.2 1.0 s Features 13.0±0.2 4.2±0.2 q q q 2.5±0.2 High foward current transfer ratio hFE High-speed switching Allowing supply with the
Panasonic Semiconductor
Panasonic Semiconductor
data


D22 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1D220Diode (spec sheet)

American Microsemiconductor
American Microsemiconductor
diode
2D2200NPN Transistor, 2SD2200

Ordering number:EN3151 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1451/2SD2200 80V/5A Switching Applications Features · Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1451/2SD2200-applied equipment. -High density surface mo
Sanyo
Sanyo
data
3D2201METAL GATE RF SILICON FET

TetraFET D2201UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 12.5V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN M I E K G • SUITABLE FOR BROAD BAND APPLICATIONS • LOW
Seme LAB
Seme LAB
gate
4D2201NPN Transistor, 2SD2201

Ordering number:EN3152 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1452/2SD2201 80V/7A Switching Applications Features · Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1452/2SD2201-applied equipment. -High density surface mo
Sanyo
Sanyo
data
5D2201UKMETAL GATE RF SILICON FET

TetraFET D2201UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 12.5V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN M I E K G • SUITABLE FOR BROAD BAND APPLICATIONS • LOW
Seme LAB
Seme LAB
gate
6D2202NPN Transistor, 2SD2202

Ordering number:EN3249 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1454/2SD2202 High-Current Switching Applications Features · Low collector-to-emitter saturation voltage. · Large current capacity. · Micaless package facilitating easy mounting. Package Dimensions unit:mm 2041A [2SB1454/2SD
Sanyo
Sanyo
data
7D2202UKMETAL GATE RF SILICON FET

TetraFET D2202UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 12.5V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN M I E K G • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Cr
Seme LAB
Seme LAB
gate



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nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


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