No | Part number | Description ( Function ) | Manufacturers | |
18 | D221 | D200 Series / DC/DC Converters D200 Series Single & Dual Output Miniature, 2W SIP DC/DC Converters Electrical Specifications Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice. Input Key Features: Parameter Conditions Min. Typ. Max. 5.5 13.2 26.4 52.8 0.3 Units ● 2W Output Power ● Miniature SIP |
MicroPower Direct |
|
17 | D2210UK | METAL GATE RF SILICON FET TetraFET D2210UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN M I E K G • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS DP PIN 1 PIN 3 SOURCE GATE PIN 2 DRAIN DIM mm A 1 |
Seme LAB |
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16 | D2211 | METAL GATE RF SILICON FET TetraFET D2211UK METAL GATE RF SILICON FET MECHANICAL DATA D B E 8 1 7 2 6 3 4 C R F 5 A O Q N M J K L GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 7.2V – 1GHz SINGLE ENDED I P H G DBC3 Package PIN 1 Source PIN 2 Drain PIN 3 Drain PIN 4 Source DIM A B C D E F G H I J K L M N O P Q R mm 6.47 0.76 45° 0.76 1.14 2.67 11.73 8.43 7.92 0.20 0.64 0.30 3.25 2. |
Seme LAB |
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15 | D2211UK | METAL GATE RF SILICON FET TetraFET D2211UK METAL GATE RF SILICON FET MECHANICAL DATA D B E 8 1 7 2 6 3 4 C R F 5 A O Q N M J K L GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 7.2V – 1GHz SINGLE ENDED I P H G DBC3 Package PIN 1 Source PIN 2 Drain PIN 3 Drain PIN 4 Source DIM A B C D E F G H I J K L M N O P Q R mm 6.47 0.76 45° 0.76 1.14 2.67 11.73 8.43 7.92 0.20 0.64 0.30 3.25 2. |
Seme LAB |
|
14 | D2212 | METAL GATE RF SILICON FET TetraFET D2212UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN M I E K G • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS DP PIN 1 PIN 3 SOURCE GATE PIN 2 DRAIN DIM mm A 1 |
Seme LAB |
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13 | D2212UK | METAL GATE RF SILICON FET TetraFET D2212UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN M I E K G • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS DP PIN 1 PIN 3 SOURCE GATE PIN 2 DRAIN DIM mm A 1 |
Seme LAB |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |