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D2144 PDF Datasheet

The D2144 is NPN Transistor - 2sd2144. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 D2144
NPN Transistor - 2SD2144

Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S FFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm) (96-232-C107)

ROHM Semiconductor
ROHM Semiconductor
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Recommended search results related to D2144

Part No Description ( Function) Manufacturers PDF
2SD2144   High-current Gain MediumPower Transistor (20V/ 0.5A)

Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S FFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) FStructure Epitaxial plana

ROHM Semiconductor
ROHM Semiconductor
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2SD2144S   High-current Gain MediumPower Transistor (20V/ 0.5A)

Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S FFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) FStructure Epitaxial plana

ROHM Semiconductor
ROHM Semiconductor
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2SK2144   Silicon N-Channel MOS FET

2SK2144 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter Outline TO-220CFM D G 12 3 1. Gate 2. Dra

Hitachi Semiconductor
Hitachi Semiconductor
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2SK2144   N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed APPLICATIONS ·Switching regulators ,DC-DC converter,Motor Control isc Product Specification 2SK2144 ABSOLUTE

Inchange Semiconductor
Inchange Semiconductor
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42144   RADIATION TOLERANT FULL BRIDGE POWER DRIVER HYBRID FOR 3-PHASE BRUSHLESS DC MOTORS

PRELIMINARY DATA SHEET 42144 RADIATION TOLERANT FULL BRIDGE POWER DRIVER HYBRID FOR 3-PHASE BRUSHLESS DC MOTORS Mii MICROCIRCUITS PRODUCTS DIVISION Features: • • • • • • • Designed for 100 krad(Si) Total Dose Hermetically Sealed Package 2A Peak Output Current Bu

Micropac Industries
Micropac Industries
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[1]    

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