No | Part number | Description ( Function ) | Manufacturers | |
1 | D2054UK | METAL GATE RF SILICON FET TetraFET D2054UK METAL GATE RF SILICON FET MECHANICAL DATA B E D 8 1 7 6 3 4 2 C R A F 5 Q O N M J K L GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM I P H G DBC4 Pa |
Seme LAB |
0  1  2  3  4  5  6  7  8 9 |
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1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
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