No | Part number | Description ( Function ) | Manufacturers | |
2 | D2017UK | METAL GATE RF SILICON FET TetraFET D2017UK METAL GATE RF SILICON FET MECHANICAL DATA C A ! B GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED FEATURES D ( 2 p ls ) E • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS F G H • LOW Crss • SIMPLE BIAS CIRCUITS DRAIN DP PIN 1 PIN 3 SOURCE GATE PIN 2 • LOW NOISE • HIGH GAIN – 13 |
Seme LAB |
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1 | D2017UK | METAL GATE RF SILICON FET TetraFET D2017UK METAL GATE RF SILICON FET MECHANICAL DATA C A ! B GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED FEATURES D ( 2 p ls ) E • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS F G H • LOW Crss • SIMPLE BIAS CIRCUITS DRAIN DP PIN 1 PIN 3 SOURCE GATE PIN 2 • LOW NOISE • HIGH GAIN – 13 |
Seme LAB |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |