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No Part number Description ( Function ) Manufacturers PDF
142 D20
Memory Micromodules General Information for D1/ D2 and C Packaging

D10, D15, D20, D22, C20, C30 MICROMODULES Memory Micromodules General Information for D1, D2 and C Packaging s Micromodules were developed specifically for embedding in Smartcards and Memory Cards The Micromodule provides: – Support for the chip – Electrical contacts – Suitable embedding interface for gluing the module to the plastic package potting side contact side

STMicroelectronics
STMicroelectronics
pdf
141 D200
SIP DC/DC Converters

D200 Series Single & Dual Output Miniature, 2W SIP DC/DC Converters Electrical Specifications Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice. Input Key Features: Parameter Conditions Min. Typ. Max. 5.5 13.2 26.4 52.8 0.3 Units ● 2W Output Po

uPD
uPD
pdf
140 D2001UK
METAL GATE RF SILICON FET

TetraFET D2001UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN M I E K G • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS DP PIN 1 PIN 3 SOURCE GATE PIN 2 DRAIN DIM mm A 16

Seme LAB
Seme LAB
pdf
139 D2002
METAL GATE RF SILICON FET

TetraFET D2002UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN M I E K G • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS DP PIN 1 PIN 3 SOURCE GATE PIN 2 DRAIN DIM mm A 16.5

Seme LAB
Seme LAB
pdf
138 D2002-
Stereo Headphone Amplifier

w headphone equipment 3V use). at .D DESCRIPTION w w Th e D2 00 2 is developed for play-b ack stereo dual OCL power a mplifier, and a ripple filter. STEREO aS HEADPHONE AMPLIFIER £¨ e e h U 4 t m o .c Silicore 3V USE£© Outline Drawing D2002 It is built in dual auto -reverse prea mp lifier, FEATURE Power a mpl ifier stage z z z OCL (Outpu t Condenser-Less). Low nois

Shaoxing Silicore Technology
Shaoxing Silicore Technology
pdf
137 D2002UK
METAL GATE RF SILICON FET

TetraFET D2002UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN M I E K G • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS DP PIN 1 PIN 3 SOURCE GATE PIN 2 DRAIN DIM mm A 16.5

Seme LAB
Seme LAB
pdf



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