Power Transistors 2SD1266, 2SD1266A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB941 and 2SB941A s Features q q q Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 (TC=25˚C) Ratings 60 80 60 80 6 5 3 35 2 150 –55 to +150 Unit Parameter C

Power Transistors 2SD1266, 2SD1266A Silicon NPN triple diffusion planar type For power amplification Unit: mm 0.7±0.1 ■ Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw 10.0±0.2 5.5±0.2 4.2±0.2 4.2±0.2