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Datasheet D111 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | D111 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD111
DESCRIPTION ·High Power Dissipation-
: PC= 100W@TC= 25℃ ·High Current Capability-
: IC = 10A
APPLICATIONS ·Designed for power amplifier , power switching ,DC-DC
converter and regulator applications.
ABSO |
 INCHANGE |
 |
| 6 | D1111 | NPN Transistor - 2SD1111 Free Datasheet http://www.datasheet4u.net/
Free Datasheet http://www.datasheet4u.net/
Free Datasheet http://www.datasheet4u.net/
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 Sanyo Semicon Device |
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| 5 | D1113 | NPN Transistor - 2SD1113 2SD1113(K)
Silicon NPN Triple Diffused
Application
Igniter
Outline
TO-220AB
2
1 1. Base 2. Collector (Flange) 3. Emitter
1
2 3
6 kΩ (Typ)
450 Ω (Typ) 3
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base |
 Hitachi Semiconductor |
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| 4 | D1115 | NPN Transistor - 2SD1115 2SD1115(K)
Silicon NPN Triple Diffused
Application
High voltage switching, igniter
Outline
TO-220AB
1 23
1. Base 2. Collector
(Flange) 3. Emitter
2 1
4.5 kΩ (Typ)
250 Ω (Typ)
3
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter vo |
Hitachi Semiconductor |
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