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CYT1969 PDF Datasheet

The CYT1969 is High Performance Current Mode Pwm Switching Power Supply Controller. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 CYT1969
High Performance Current Mode PWM Switching Power Supply Controller

CYT-电源技术 CYT1969 高性能电流模式PWM开关电源控制器 概述: CYT1969是一款高集成度、高性能的电流 模式 PWM控制器芯片。适用于电源适配器等 中小功率的开关电源设备。 为了降低待机功耗,满足更高的绿色环保 标 准 , 芯 片 提 供 了 脉 冲 模 式 (Burst Mode) 功 能。即在轻载或者无负�

CYT
CYT
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Recommended search results related to CYT1969

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2SA1969   PNP Epitaxial Planar Silicon Transistor

Ordering number:5098 PNP Epitaxial Planar Silicon Transistor 2SA1969 High-Frequency Medium-Output Amplifier,MediumCurrent Ultrahigh-Speed Switching Applications Features · High fT (fT=1.7GHz typ). · Large current capacity (IC=–400mA). Package Dimensions unit:mm 2038A [2SA1

Sanyo Semicon Device
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2SC1969   NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)

w w w .d e e h s a t a . u t4 m o c

Mitsubishi Electric Semiconductor
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2SC1969   silicon NPN epitaxial planar type transistor

Description The Eleflow 2SC1969 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers within the HF band, ideal for mobile radio applications. Features • High power gain: Gpe ≥ 12dB @Vcc = 12V, Po = 16W, f = 27MHz • Emitter ballasted constructio

eleflow
eleflow
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2SC1969   Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC1969 DESCRIPTION ·High Power Gain- : Gpe≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for 10~14 watts output power class AB amplifiers applications in HF band. ABSOLUT

INCHANGE
INCHANGE
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2SK1969-01   N-channel MOS-FET

2SK1969-01 FAP-IIIA Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode N-channel MOS-FET 60V 0,017Ω 50A 125W > Outline Drawing > Applications - Motor Control - Ge

Fuji Electric
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