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CS2N60F PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
4 CS2N60F
VDMOS Transistor

华晶分立器件 CS2N60(F) CS2N60(F)型 VDMOS 晶体管 1.概述与特点 CS2N60(F)是 N 沟道 600V 系列 VDMOS 晶体管,主要用于电源适配器、充电器等各种功率开 关电路。 具有如下特点: ● 开关速度快 ● 通态电阻小 ● 可并联使用 ● 驱动简单 封装形式: 产品名称 CS2N60 CS2N60F 封装形式 TO-220 TO-220F VDSS 600

ETC
ETC
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3 CS2N60F
Silicon N-Channel Power MOSFET

Huajing Discrete Devices Silicon General Description: CS2N60F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The packa

HUAJING
HUAJING
pdf
2 CS2N60F
N-CHANNEL MOSFET

BRF2N60(CS2N60F) 用途: 用于高功率 DC/DC 转换和功率开关。 N-CHANNEL MOSFET/N 沟道 MOS 晶体管 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. 特点: 低栅电荷,低反馈电容,开关速度快。 Features: Low gate charge ,low crss, fast switching. 极限参数/Absolute maximum ratings

LZG
LZG
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1 CS2N60FA9H
Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS2N60F A9H ○R General Description: VDSS 600 V CS2N60F A9H, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 24 W which reduce the conduction loss, improve switching RDS(ON)Typ 3.6 Ω performance and enhance the avalanche energy. The transistor can be used in various p

Huajing Microelectronics
Huajing Microelectronics
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