Datasheet CS20N60A8H Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CS20N60A8H	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS20N60 A8H ○R General Description： CS20N60 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 20 250 0.36 performance and enh	Huajing Microelectronics

CS20N60 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CS20N60AND	Silicon N-Channel Power MOSFET Huajing Discrete Devices Silicon General Description： CS20N60AND, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be	TGW
CS20N60ANH	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS20N60 ANH ○R General Description： CS20N60 ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 20 250 0.36	Huajing Microelectronics
CS20N60A8H	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS20N60 A8H ○R General Description： CS20N60 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 20 250 0.36	Huajing Microelectronics

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