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CS1N60 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
8 CS1N60
VDMOS

»ª¾§·ÖÁ¢Æ÷¼þ CS1N60(F) CS1N60(F)ÐÍ 1.¸ÅÊöÓëÌصã CS1N60(F)ÊÇ ¹Øµç· ¾ßÓÐÈçÏÂÌص㠿ª¹ØËÙ¶Èì ̬ͨµç×èС ¿É²¢ÁªÊ¹Óà Çý¶¯¼òµ¥ ·â×°ÐÎʽ ²úÆ·Ãû³ CS1N60 CS1N60F ·â×°ÐÎʽ TO-220 TO-220F N ¹µµÀ 600V ϵÁÐ VDMOS ¾§Ìå¹Ü Ö÷ÒªÓÃÚµçÔ´ÊÅäÆ÷

EDN
EDN
pdf
7 CS1N60A1H
Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS1N60 A1H ○R General Description: CS1N60 A1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 600 0.8 3 11 performance and enhance the avalanche energy. The transistor can be used in various power switching ci

Huajing Microelectronics
Huajing Microelectronics
pdf
6 CS1N60A3H
Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS1N60 A3H ○R General Description: VDSS 600 V CS1N60 A3H, the silicon N-channel Enhanced ID 0.8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 25 W which reduce the conduction loss, improve switching RDS(ON)Typ 11 Ω performance and enhance the avalanche energy. The transistor can be used in various p

Huajing Microelectronics
Huajing Microelectronics
pdf
5 CS1N60B1R
Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS1N60 B1R ○R General Description: CS1N60 B1R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 600 1.5 3 7 performance and enhance the avalanche energy. The transistor can be used in various power switching cir

Huajing Microelectronics
Huajing Microelectronics
pdf
4 CS1N60B3R
Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS1N60 B3R ○R General Description: CS1N60 B3R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 600 1.5 32 7 performance and enhance the avalanche energy. The transistor can be used in various power switching ci

Huajing Microelectronics
Huajing Microelectronics
pdf
3 CS1N60C1H
Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS1N60 C1H ○R General Description: CS1N60 C1H-BD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 600 1.0 3 9 performance and enhance the avalanche energy. The transistor can be used in various power switching

Huajing Microelectronics
Huajing Microelectronics
pdf


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