No | Part number | Description ( Function ) | Manufacturers | |
1 | CPS041 | Silicon Controlled Rectifier Sensitive Gate SCR Chip PROCESS CPS041 Silicon Controlled Rectifier Sensitive Gate SCR Chip PROCESS DETAILS Process Die Size Die Thickness Cathode Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 41 x 41 MILS 8.7 MILS ± 0.6 MILS 18 x 8 MILS 7.1 x 7.1 MILS Al - 45,000Å Au - 10,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 6 |
Central Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
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List of most widely used semiconductors
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