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Datasheet CM8 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | CM800DU-12H | Dual IGBTMOD 800 Amperes/600 Volts CM800DU-12H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dual IGBTMOD™ U-Series Module
800 Amperes/600 Volts
A "R" (4 PLACES) E F G H
G2
J
E2 C2E1 E2
B
E
K
E1
L
M
G1
C1
J
"T" (4 PLACES) N "S" (3 PLACES) Q P
D
C
Description: Powerex IGBTMOD™ Mo |  Powerex Power Semiconductors | igbt |
| 2 | CM800DZ-34H | HIGH POWER SWITCHING USE INSULATED TYPE MITSUBISHI HVIGBT MODULES
CM800DZ-34H
HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE
CM800DZ-34H
q IC ................................................................... 800A q VCES .............................................. | Powerex Power Semiconductors | data |
| 3 | CM800DZ-34H | HIGH POWER SWITCHING USE INSULATED TYPE
MITSUBISHI HVIGBT MODULES
CM800DZ-34H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
CM800DZ-34H
q IC ................................................................... 800A q VCES ......................... |  Mitsubishi Electric | data |
| 4 | CM800E2C-66H | 2nd-Version HVIGBT Modules
MITSUBISHI HVIGBT MODULES
CM800E2C-66H
HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE
CM800E2C-66H
q IC ................................................................... 800A q VCES ....................... | Mitsubishi Electric | igbt |
| 5 | CM800E2Z-66H | HIGH POWER SWITCHING USE
MITSUBISHI HVIGBT MODULES
CM800E2Z-66H
HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE
CM800E2Z-66H
q IC ................................................................... 800A q VCES ....................... |  Mitsubishi Electric Semiconductor | data |
CM8 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | CM800DU-12H | Dual IGBTMOD 800 Amperes/600 Volts CM800DU-12H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dual IGBTMOD™ U-Series Module
800 Amperes/600 Volts
A "R" (4 PLACES) E F G H
G2
J
E2 C2E1 E2
B
E
K
E1
L
M
G1
C1
J
"T" (4 PLACES) N "S" (3 PLACES) Q P
D
C
Description: Powerex IGBTMOD™ Mo Powerex Power Semiconductors igbt | | |
| 2 | CM800DZ-34H | HIGH POWER SWITCHING USE INSULATED TYPE MITSUBISHI HVIGBT MODULES
CM800DZ-34H
HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE
CM800DZ-34H
q IC ................................................................... 800A q VCES .............................................. Powerex Power Semiconductors data | | |
| 3 | CM800DZ-34H | HIGH POWER SWITCHING USE INSULATED TYPE
MITSUBISHI HVIGBT MODULES
CM800DZ-34H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
CM800DZ-34H
q IC ................................................................... 800A q VCES ......................... Mitsubishi Electric data | | |
| 4 | CM800E2C-66H | 2nd-Version HVIGBT Modules
MITSUBISHI HVIGBT MODULES
CM800E2C-66H
HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE
CM800E2C-66H
q IC ................................................................... 800A q VCES ....................... Mitsubishi Electric igbt | | |
| 5 | CM800E2Z-66H | HIGH POWER SWITCHING USE
MITSUBISHI HVIGBT MODULES
CM800E2Z-66H
HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE
CM800E2Z-66H
q IC ................................................................... 800A q VCES ....................... Mitsubishi Electric Semiconductor data | | |
| 6 | CM800E6C-66H | HIGH POWER SWITCHING USE INSULATED TYPE
MITSUBISHI HVIGBT MODULES
CM800E6C-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
CM800E6C-66H
q IC ................................................................... 800A q VCES ....................... Mitsubishi Electric data | | |
| 7 | CM800HA-24H | HIGH POWER SWITCHING USE INSULATED TYPE MITSUBISHI IGBT MODULES
CM800HA-24H
HIGH POWER SWITCHING USE INSULATED TYPE
A B U - M4 THD (2 TYP.)
R
K P
E
M
G
B S - M8 THD (2 TYP.)
A
C
E
C
J
G
Q T - DIA. (4 TYP.) H
L F N
Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of on Mitsubishi Electric Semiconductor data | |
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