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Datasheet CEB Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 172 | CEB01N6 | N-Channel Enhancement Mode Field Effect Transistor CEP01N6/CEB01N6 CEI01N6/CEF01N6
N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP01N6 CEB01N6 CEI01N6 CEF01N6 VDSS 650V 650V 650V 650V RDS(ON) 15Ω 15Ω 15Ω 15Ω ID 1A 1A 1A 1A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and cur |
 CET |
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| 171 | CEB01N65 | N-Channel Enhancement Mode Field Effect Transistor CEP01N65/CEB01N65
CEF01N65
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type CEP01N65 CEB01N65 CEF01N65
VDSS 650V 650V
650V
RDS(ON) 10.5Ω 10.5Ω
10.5Ω
ID 1.3A 1.3A 1.3A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and |
CET |
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| 170 | CEB01N6G | N-Channel Enhancement Mode Field Effect Transistor CEP01N6G/CEB01N6G CEF01N6G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type CEP01N6G CEB01N6G CEF01N6G
VDSS 600V 600V
600V
RDS(ON) 9.3Ω 9.3Ω
9.3Ω
ID @VGS 1A 10V 1A 10V 1A d 10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capabili |
CET |
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| 169 | CEB02N6 | N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR CEP02N6/CEB02N6
4
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter DYNAMIC CHARACTERISTICS b
Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Forward Voltage CISS COSS CRSS
a
Symbol
Condition
Min Typ Max Unit
250 50 30 1.5
PF PF PF
VDS =25V, VGS = 0V |
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