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Datasheet C945P Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | C945P | 2PC945P
DISCRETE SEMICONDUCTORS
DATA SHEET
ndbook, halfpage
M3D186
2PC945 NPN general purpose transistor
Product specification Supersedes data of 1997 Mar 26 1999 May 28
Philips Semiconductors
Product specification
NPN general purpose transistor
FEATURES • |  NXP Semiconductors | data |
| 2 | C945P | 2PC945P DATA SHEET
NPN SILICON TRANSISTOR
2SC945
NPN SILICON TRANSISTOR
DESCRIPTION
The 2SC945 is designed for use in driver stage of AF amplifier and low speed switching.
FEATURES
• High voltage LVCEO = 50 V MIN.
• Excellent hFE linearity hFE1 = (0.1 mA)/hFE2 (1.0 mA) = 0.92 TYP.
ABSOLUTE MAXIMUM RA |  NEC | data |
C94 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | C941 | NPN Transistor, 2SC941 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC941TM
2SC941TM
High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications
Unit: mm
· Low noise figure: NF = 3.5dB (max) (f = 1 MHz)
Maximum Ratings (Ta = 25°C)
Characteristi  Toshiba Semiconductor data | | |
| 2 | C941TM | NPN Transistor, 2SC941TM TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC941TM
2SC941TM
High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications
Unit: mm
· Low noise figure: NF = 3.5dB (max) (f = 1 MHz)
Maximum Ratings (Ta = 25°C)
Characteristi Toshiba Semiconductor data | | |
| 3 | C945 | NPN Transistor TIGER ELECTRONIC CO.,LTD
TO-92 Plastic-Encapsulate Transistors
C945 TRANSISTOR (NPN )
TO-92
FEATURE z Excellent hFE linearity z Low noise z Complementary to A733
1.EMITTER 2.COLLECTOR 3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg
Parameter Coll  TGS transistor | | |
| 4 | C945 | Plastic-Encapsulate Transistors WILLAS
SO1T.0-A2S3URPFAlaCEsMtiOcU-NETnScCHaOpTsTKuYlBaAtReRTIErRaRnECsTiIsFItEoRSrs-20V- 200V
SOD-123+ PACKAGE
FM120-M+ C945 THRU
FM1200-M
Pb Free Produc
Features
• Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
 WILLAS transistor | | |
| 5 | C945 | NPN Transistor C945
TRANSISTOR (NPN)
FEATURE
SOT-23
z Excellent hFE Linearity z Low noise z Complementary to A733
1. BASE 2. EMITTER 3. COLLECTOR
MARKING:CR·
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Ba  JinYu transistor | | |
| 6 | C945 | NPN Transistor C945
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN)
FEATURES
* Power dissipation
PCM :
0.2 W (Tamb=25OC)
* Collector current
ICM :
0.15
A
* Collector-base voltage
V(BR)CBO : 60
V
* Operating and storage junction temperature range
TJ,Tstg: -55OC to +150OC
MECHANICAL DATA
* Case: Molded pla  RECTRON transistor | | |
| 7 | C945 | NPN Plastic Encapsulate Transistor Elektronische Bauelemente
C945
60V, 0.15A, 200mW NPN Plastic Encapsulate Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
Excellent hFE Linearity Low noise Complementary to A733
MARKING
Product C945
Marking Code CR
SOT-23
A
L
3
Top View  SeCoS transistor | |
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