| No | Part number | Description ( Function ) | Manufacturers | |
| 20 | C6000 | NPN Transistor - 2SC6000 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6000 High Speed Switching Applications DC-DC Converter Applications 2SC6000 Unit: mm • High DC current gain: hFE = 250 to 400 (IC = 2.5 A) • Low collector-emitter saturation: VCE (sat) = 0.18 V (max) • High speed switching: tf = 13 ns (typ) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Col |
 Toshiba Semiconductor |
|
| 19 | C6010 | NPN Transistor - 2SC6010 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6010 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications 2SC6010 Unit: mm • High speed switching: tf = 0.24μs (max) (IC = 0.3A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Collector-emitte |
 Toshiba |
|
| 18 | C6011 | NPN Transistor - 2SC6011 2SC6011 Audio Amplification Transistor Features and Benefits ▪ Small package (TO-3P) ▪ High power handling capacity, 160 W ▪ Improved sound output by reduced on-chip impedance ▪ For professional audio (PA) applications, VCEO = 200 V versions available ▪ Complementary to 2SA2151 ▪ Recommended output driver: 2SC4832 Package: 3 Lead TO-3P Description By adapting the |
 Allegro |
|
| 17 | C6012 | NPN Transistor - 2SC6012 Power Transistors 2SC6012 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 (10.0) Unit: mm φ 3.2±0.1 5˚ (4.5) 3.0±0.3 5˚ ■ Features • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide safe oeration area 26.5±0.5 (23.4) (2.0) 5˚ (4.0) 2.0±0.2 1.1±0.1 0.7 |
 Panasonic Semiconductor |
|
| 16 | C6017 | NPN Transistor - 2SC6017 Ordering number : ENN8275 2SA2169 / 2SC6017 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2169 / 2SC6017 Applications • High-Current Switching Applications Relay drivers, lamp drivers, motor drivers. Features • • • • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. S |
 Sanyo Semicon Device |
|
| 15 | C6019 | NPN Transistor - 2SC6019 Ordering number : ENN8342 2SC6019 2SC6019 Applications • NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications Relay drivers, lamp drivers, motor drivers, flash. Features • • • • • • Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow h |
Sanyo Semicon Device |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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