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Datasheet C5906 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | C5906 | Silicon NPN Epitaxial Type Transistor TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5906
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
2SC5906
Unit: mm
• High DC current gain: hFE = 200 to 500 (IC = 0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.2 V (max) • High-speed swi |  Toshiba | transistor |
| 2 | C5906 | Silicon NPN transistor Silicon NPN transistor epitaxial type C5906
C5906
[ Applications ] High voltage, High current
[ Feature ] High voltage VCEO= 170V High current gain charactristic Low collector-emitter saturation voltage VCE(sat)= 0.45V(Max.) at IC/IB= 2A/200mA Fast-switching speed
[ Absolute maximum ratings (Ta= |  PHENITEC SEMICONDUCTOR | transistor |
C59 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | C5902 | NPN Transistor, 2SC5902 Power Transistors
2SC5902
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV
15.5±0.5
(10.0)
Unit: mm
φ 3.2±0.1 5˚
(4.5)
3.0±0.3 5˚
■ Features
• High breakdown voltage: VCBO ≥ 1 700 V • Wide safe operation area • Built-in dumper diode
26.5±0.5
(23.4)
(2  Panasonic Semiconductor data | | |
| 2 | C5904 | NPN Transistor, 2SC5904 Power Transistors
2SC5904
Silicon NPN triple diffusion mesa type
For Horizontal deflection output for TV, CRT monitor
15.5±0.5
(10.0)
Unit: mm
φ 3.2±0.1 5˚
(4.5)
■ Features
• High breakdown voltage (VCBO ≥ 1 700 V) • High-speed switching (tf < 200 nsec) • Wide safe operation area
26 Panasonic Semiconductor data | | |
| 3 | C5905 | NPN Transistor, 2SC5905
Power Transistors
2SC5905
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV, CRT monitor
15.5±0.5
(10.0)
Unit: mm
φ 3.2±0.1 5˚
(4.5)
3.0±0.3 5˚
■ Features
• High breakdown voltage: VCBO ≥ 1 700 V • High-speed switching: tf < 200 ns • Panasonic Semiconductor data | | |
| 4 | C5906 | Silicon NPN Epitaxial Type Transistor TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5906
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
2SC5906
Unit: mm
• High DC current gain: hFE = 200 to 500 (IC = 0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.2 V (max) • High-speed swi Toshiba transistor | | |
| 5 | C5906 | Silicon NPN transistor Silicon NPN transistor epitaxial type C5906
C5906
[ Applications ] High voltage, High current
[ Feature ] High voltage VCEO= 170V High current gain charactristic Low collector-emitter saturation voltage VCE(sat)= 0.45V(Max.) at IC/IB= 2A/200mA Fast-switching speed
[ Absolute maximum ratings (Ta= PHENITEC SEMICONDUCTOR transistor | | |
| 6 | C5909 | NPN Transistor, 2SC5909 Power Transistors
2SC5909
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
(10.0)
Unit: mm
φ 3.2±0.1 5˚
(4.5)
www.datasheet4u.com
3.0±0.3 5˚
■ Features
(2.0)
• High breakdown voltage: VCBO ≥ 1 500 V • High-speed switching: tf < 200 ns • Wide saf  Panasonic data | | |
| 7 | C5914 | NPN Transistor, 2SC5914
Power Transistors
2SC5914
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV, CRT monitor
15.5±0.5
(10.0)
Unit: mm
φ 3.2±0.1 5˚
(4.5)
3.0±0.3 5˚
■ Features
• High breakdown voltage: VCBO ≥ 1 500 V • High-speed switching: tf < 200 ns • Panasonic data | |
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