No | Part number | Description ( Function ) | Manufacturers | |
20 | C5902 | NPN Transistor - 2SC5902 Power Transistors 2SC5902 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV 15.5±0.5 (10.0) Unit: mm φ 3.2±0.1 5˚ (4.5) 3.0±0.3 5˚ ■ Features • High breakdown voltage: VCBO ≥ 1 700 V • Wide safe operation area • Built-in dumper diode 26.5±0.5 (23.4) (2.0) 5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5 5.5±0.3 5˚ 5˚ |
Panasonic Semiconductor |
|
19 | C5904 | NPN Transistor - 2SC5904 Power Transistors 2SC5904 Silicon NPN triple diffusion mesa type For Horizontal deflection output for TV, CRT monitor 15.5±0.5 (10.0) Unit: mm φ 3.2±0.1 5˚ (4.5) ■ Features • High breakdown voltage (VCBO ≥ 1 700 V) • High-speed switching (tf < 200 nsec) • Wide safe operation area 26.5±0.5 3.0±0.3 5˚ (23.4) (2.0) 5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45 |
Panasonic Semiconductor |
|
18 | C5905 | NPN Transistor - 2SC5905 Power Transistors 2SC5905 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor 15.5±0.5 (10.0) Unit: mm φ 3.2±0.1 5˚ (4.5) 3.0±0.3 5˚ ■ Features • High breakdown voltage: VCBO ≥ 1 700 V • High-speed switching: tf < 200 ns • Wide safe operation area 26.5±0.5 (23.4) (2.0) 5˚ (4.0) 2.0±0.2 1.1±0.1 0 |
Panasonic Semiconductor |
|
17 | C5906 | Silicon NPN Epitaxial Type Transistor TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5906 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications 2SC5906 Unit: mm • High DC current gain: hFE = 200 to 500 (IC = 0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.2 V (max) • High-speed switching: tf = 25 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic |
Toshiba |
|
16 | C5906 | Silicon NPN transistor Silicon NPN transistor epitaxial type C5906 C5906 [ Applications ] High voltage, High current [ Feature ] High voltage VCEO= 170V High current gain charactristic Low collector-emitter saturation voltage VCE(sat)= 0.45V(Max.) at IC/IB= 2A/200mA Fast-switching speed [ Absolute maximum ratings (Ta=25C) ] Characteristic Symbol Maximum ratings Collector-base voltage VCBO 20 |
PHENITEC SEMICONDUCTOR |
|
15 | C5909 | NPN Transistor - 2SC5909 Power Transistors 2SC5909 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 (10.0) Unit: mm φ 3.2±0.1 5˚ (4.5) 3.0±0.3 5˚ ■ Features (2.0) • High breakdown voltage: VCBO ≥ 1 500 V • High-speed switching: tf < 200 ns • Wide safe operation area 26.5±0.5 (23.4) 5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45± |
Panasonic |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |