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C5586 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
26 C5502
2SC5502

Ordering number:ENN6279 NPN Epitaxial Planar Silicon Transistor 2SC5502 High-Frequency Low-Noise Amplifier Applications Features · Low noise : NF=1.1dB typ (f=1GHz). · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=8GHz typ. Package Dimensions unit:mm 2161 [2SC5502] 0.425 0.65 0.65 0.3 43 0.15 0 to 0.1 0.2 1.25 2.1 12 0.6 0.65 0.5 2.0 Speci

Sanyo
Sanyo
pdf
25 C5505
2SC5505

Power Transistors 2SC5505 Silicon NPN epitaxial planar type For power amplification ■ Features • High-speed switching • TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector

Panasonic
Panasonic
pdf
24 C5508
2SC5508

PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA • Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 20

NEC
NEC
pdf
23 C5511
2SC5511

2SC5511 Transistors For Audio Amplifier output - TV Velosity Modulation (160V, 1.5A) 2SC5511 zExternal dimensions (Unit : mm) TO-220FN 10.0 zStructure NPN Silicon Epitaxial Planar Transistor 4.5 φ3.2 2.8 zFeatures 1) Electrical characteristics of DC current gain hFE is flat. 2) High breakdown voltage. (BVCEO=160V(Min.), at IC=1mA) 3) High fT. (Typ. 15

Rohm
Rohm
pdf
22 C5516
2SC5516

Power Transistors 2SC5516 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25˚C) Ratings 1500 1500 600 5 30 20 8 70 3.5 150 –55 to +150 Unit V V V V A

Panasonic
Panasonic
pdf
21 C551E
C-551E

C/A-551X, C/A-561X SINGLE DIGIT DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Electro-Optical Characteristics Length Vf(V)20mA Iv(ucd)10mA Fig.No. ɡp(nm) Typ. Max. Typ. C-551H C-551E C-551G C-551Y C-551SR C-561H C-561E C-561G C-561Y C-561SR A-551H A-551E A-551G A-551Y A-551SR A-561H A-561E A-561G A-561Y A-561SR

Para Light Electronics
Para Light Electronics
pdf



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