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C55 PDF Datasheet

The C55 is . It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
26 C5502
NPN Transistor - 2SC5502

Ordering number:ENN6279 NPN Epitaxial Planar Silicon Transistor 2SC5502 High-Frequency Low-Noise Amplifier Applications Features · Low noise : NF=1.1dB typ (f=1GHz). · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=8GHz typ. Package Dimensions unit:mm 2161 [2SC5502] 0.425 0.65 0.65 0.3 43 0.15 0 to 0.1 0.2 1.25 2.1 12 0.6 0.65 0.5 2.0 Speci

Sanyo
Sanyo
pdf
25 C5505
NPN Transistor - 2SC5505

Power Transistors 2SC5505 Silicon NPN epitaxial planar type For power amplification ■ Features • High-speed switching • TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector

Panasonic
Panasonic
pdf
24 C5508
NPN Transistor - 2SC5508

PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA • Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 20

NEC
NEC
pdf
23 C5511
NPN Transistor - 2SC5511

2SC5511 Transistors For Audio Amplifier output - TV Velosity Modulation (160V, 1.5A) 2SC5511 zExternal dimensions (Unit : mm) TO-220FN 10.0 zStructure NPN Silicon Epitaxial Planar Transistor 4.5 φ3.2 2.8 zFeatures 1) Electrical characteristics of DC current gain hFE is flat. 2) High breakdown voltage. (BVCEO=160V(Min.), at IC=1mA) 3) High fT. (Typ. 15

ROHM Semiconductor
ROHM Semiconductor
pdf
22 C5516
NPN Transistor - 2SC5516

Power Transistors 2SC5516 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25˚C) Ratings 1500 1500 600 5 30 20 8 70 3.5 150 –55 to +150 Unit V V V V A

Panasonic
Panasonic
pdf
21 C551E
C-551E

C/A-551X, C/A-561X SINGLE DIGIT DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Electro-Optical Characteristics Length Vf(V)20mA Iv(ucd)10mA Fig.No. ɡp(nm) Typ. Max. Typ. C-551H C-551E C-551G C-551Y C-551SR C-561H C-561E C-561G C-561Y C-561SR A-551H A-551E A-551G A-551Y A-551SR A-561H A-561E A-561G A-561Y A-561SR

Para Light Electronics
Para Light Electronics
pdf

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List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
pdf

 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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