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Datasheet C536 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | C536 | NPN Transistor, 2SC536 2SC536
2SC536
FEATURES Power dissipation PCM:
TRANSISTOR (NPN)
TO-92
1. EMITTER
400 mW (Tamb=25℃)
2. COLLECTOR 3. BASE 1 2 3
Collector current ICM: 100 mA Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERI |  WEJ | data |
| 2 | C536 | NPN Silicon Epitaxial Planar Transistor 2SC536
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain.
On special request, these transistors can be manufactured in different pin configurations.
1. Emitter 2. Co |  Bluecolour | transistor |
| 3 | C5360 | NPN Transistor, 2SC5360 TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5360
Color TV Chroma Output Applications
2SC5360
Unit: mm
• High voltage: VCEO = 300 V • Small collector output capacitance: Cob = 5.0 pF (typ.) • High transition frequency: fT = 100 MHz (typ.)
Maximum Ratings (Tc = 25°C)
Characterist |  Toshiba Semiconductor | data |
| 4 | C5368 | NPN Transistor, 2SC5368 2SC5368
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5368
High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications
Unit: mm
• • •
High speed: tr = 0.5 μs (max), tf = 0.3 μs (max) (IC = 0.8 A) High breakdown voltage: VCEO = 450 V High DC c | Toshiba Semiconductor | data |
C53 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | C5300 | VCXO 9X14 J Leaded Surface Mount Package Reflow Process Compatible Optional ACMOS
C5300
Typical Applications
Base Stations Test Equipment Telecom & Wireless Infrastructure Digital Switching
VCXO
Features
9X14 J Leaded Surface Mount Package Reflow Process Compatible Optional ACMOS, TTL and LVPECL
Previous Corning Model Numbers Frequency range
MC044, MC344,  Vectron International cmos | | |
| 2 | C5300 | NPN Transistor, 2SC5300 Ordering number:EN5416A
NPN Triple Diffused Planar Silicon Transistor
2SC5300
Ultrahigh-Definition Color Display Horizontal Deflection Output Applications
Features
· High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).
· Adoption of MB  Sanyo data | | |
| 3 | C5301 | NPN Transistor, 2SC5301 Free Datasheet http://www.Datasheet-PDF.com/
Free Datasheet http://www.Datasheet-PDF.com/
Free Datasheet http://www.Datasheet-PDF.com/
 Sanyo Semicon Device data | | |
| 4 | C5302 | NPN Transistor, 2SC5302 Ordering number:EN5363B
NPN Triple Diffused Planar Silicon Transistor
2SC5302
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· Fast speed (t f=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process). · Adoption of MBI Sanyo Semicon Device data | | |
| 5 | C5303 | NPN Transistor, 2SC5303 Ordering number:ENN6177
NPN Triple Diffused Planar Silicon Transistor
2SC5303
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).
· Adoption of MBIT Sanyo Semicon Device data | | |
| 6 | C5305 | NPN Transistor, 2SC5305 UTC 2SC5305
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR
FEATURES
* High hFE for Low base drive requirement * Suitable for half bridge light ballast Applications * Built-in Free-wheeling Diode makes it specially
suitable for light ballast Applications * Well  Unisonic Technologies data | | |
| 7 | C5305D | KSC5305D
KSC5305D
KSC5305D
High Voltage High Speed Power Switch Application
• Built-in Free-wheeling Diode makes efficient anti saturation operation • Suitable for half bridge light ballast Applications • No need to interest an hFE value because of low variable storage-time spread  Fairchild Semiconductor data | |
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