2SC5354 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5354 High-Speed and High-Voltage Switching Applications Switching Regulator Applications High-Speed DC-DC Converter Applications Unit: mm • • Excellent switching times: tr = 0.7 μs (max) tf = 0.5 μs (max) (IC = 2 A) High breakdown voltage: VCEO = 800 V Absolute Maximum Ratings (Tc =

2SC536 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configuration

2SC5368 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5368 High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications Unit: mm • • • High speed: tr = 0.5 μs (max), tf = 0.3 μs (max) (IC = 0.8 A) High breakdown voltage: VC

Transistor 2SC5378 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm s Features q q q q 2.1±0.1 0.425 1.25±0.1 0.425 Low noise figure NF. High gain. High transition frequency fT. S-Mini type package, allowin