| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | C5354 | NPN Transistor - 2SC5354 2SC5354 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5354 High-Speed and High-Voltage Switching Applications Switching Regulator Applications High-Speed DC-DC Converter Applications Unit: mm • • Excellent switching times: tr = 0.7 μs (max) tf = 0.5 μs (max) (IC = 2 A) High breakdown voltage: VCEO = 800 V Absolute Maximum Ratings (Tc = |
 Toshiba Semiconductor |
|
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Recommended search results related to C5354 |
| Part No | Description ( Function) | Manufacturers | |
| 1SMC5354 | SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 5.0 Watts) 1SMC5348 THRU 1SMC5388 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 5.0 Watts FEATURES l For surface mounted applications in order to optimize board space l Low profile package l Built-in strain relief l l l l l Glass passivated junction Low inductance Typi |
 Pan Jit International Inc. |
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| 1SMC5354 | SURFACE MOUNT SILICON ZENER DIODE 1SMC5348 THRU 1SMC5388 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 5.0 Watts FEATURES l l l l l l l l For surface mounted applications in order to DO-214AB optimize board space Low profile package Built-in strain relief Glass passivated junction Low induc |
 TRSYS |
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| 2SC5354 | Silicon NPN Triple Diffused Type TRANSISTOR TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5354 High-Speed and High-Voltage Switching Applications Switching Regulator Applications High-Speed DC-DC Converter Applications 2SC5354 Unit: mm • Excellent switching times: tr = 0.7 μs (max) tf = 0.5 μs (max) (IC = 2 |
Toshiba Semiconductor |
|
| 2SC5354 | NPN Plastic-Encapsulate Transistor 2SC5354 NPN Plastic-Encapsulate Transistor P b Lead(Pb)-Free FEATURES * Excellent hFE Linearity * Low Noise 1. BASE 2. EMITTER 3. COLLECTOR 3 1 2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC Ib PC TJ Tstg Parameter Collector- Base Voltage Collector- |
 Weitron |
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| 2SC5354 | Silicon NPN Power Transistor INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5354 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 800V(Min) ·High Switching Speed APPLICATIONS ·High speed and high voltage switching applications. ·Switching regulat |
 Inchange Semiconductor |
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 Vishay |
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