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Datasheet C52 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
51 | C5200 | NPN Transistor - 2SC5200 2SC5200
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5200
Power Amplifier Applications
Unit: mm • • • High breakdown voltage: VCEO = 230 V (min) Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifier’s output stage
Maximum Ratings (Tc = 25°C)
Characteri |
Toshiba |
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50 | C5201 | NPN Transistor - 2SC5201 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
2SC5201
High-Voltage Switching Applications
2SC5201
Unit: mm
• High breakdown voltage: VCEO = 600 V • Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 20 mA, IB = 0.5 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symb |
Toshiba |
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49 | C5206 | Silicon NPN Triple Diffused Transistor 2SC5206
Silicon NPN Triple Diffused
Application
High power switching
Features
• High breakdown voltage VCBO = 500 V
• Isolated package TO-220FM
Outline
TO-220FM
123
1. Base 2. Collector 3. Emitter
2SC5206
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emi |
Hitachi |
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48 | C5207A | NPN Transistor - 2SC5207A
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respectiv |
Hitachi Semiconductor |
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