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C5177 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
1 C5177
2SC5177

DATA SHEET SILICON TRANSISTOR 2SC5177 NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Current Consumption and High Gain |S21e|2 = 9.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 0.4 –0.05 +0.1 PACKAGE DIMENSIONS (Units: mm) 2.8±0.2 1.5 0.65 –0.15 +0.1

NEC
NEC
pdf

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C51 Data sheets

Part No Description ( Function) Manufacturers PDF
C5129   2SC5129

Toshiba
Toshiba
datasheet pdf
C5149    2SC5149

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf
C5198   2SC5198

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications 2SC5198 Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage Absolute Maximum Ra

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf


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