C5022 PDF Datasheet Search Results |
| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | C5022 | 2SC5022 2SC5022 Silicon NPN Triple Diffused Application High voltage amplifier Features • High breakdown voltage V (BR)CEO = 1500 V Min Outline TO-220FM 12 3 1. Base 2. Collector 3. Emitter Datasheet pdf - http:// / 2SC5022 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base vo |
 Hitachi Semiconductor |
|
0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z ALL |
C50 Data sheets |
| Part No | Description ( Function) | Manufacturers | |
| C5027S | Plastic-Encapsulate Transistors 先进科技电子有限公司 Advanced CO.,LTD. Technology Electronics TO-126 Plastic-Encapsulate Transistors ATE 先进科技电子有限公司 Advanced CO.,LTD. Technology Electronics 1/2 先进科技电子有限公司 Advanced CO.,LTD. Technology El |
 ATE |
|
| C5027 | KSC5027 KSC5027 KSC5027 High Voltage and High Reliability • High Speed Switching • Wide SOA 1 TO-220 2.Collector 3.Emitter 1.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Param |
 Fairchild Semiconductor |
|
| C5088 | NPN EPITAXIAL PLANAR TYPE (VHF-UHF BAND LOW NOESE AMPLIFIER APPLICATIONS)
|
 ETC |
|