C40 PDF Datasheet

intronies MONOLITHIC WIDEBAND CRT DISTORTION CORRECTION DEVICE FEATURES r 16 pin ceramic dip (C300 Series) r Minimum of external components required o Easily adjusts for yoke errors o Accuracy better than 0.590 Max (C312) o Bandwidth compatible with l0MHz systems r Both geometry and focus available o MIL 883C available o Low cost APPLICATIONS (for Vector D

Ordering number:EN2960 NPN Triple Diffused Planar Silicon Transistor 2SC4002 High-Voltage Driver Applications Features · High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linearity. Package Dimensions unit:mm 2003B [2SC4002] 5.0 4.0 4.0 0.6 2.0 14.0 5.0 0.45 0.5 0.45 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-B

2SC4002 Ordering number : ENN2960A 2SC4002 NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • High breakdown voltage. • Adoption of MBIT process. • Excellent hFE linearity. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Curre

ST 2SC4002 NPN Silicon Triple Diffused Planar Transistor for High-Voltage Driver Applications. The transistor is subdivided into two groups, D and E, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.18g Absolute Maximum Ratings (T a = 25oC) Collector Base Voltage

2SC4002 NPN Silicon Triple Diffused Planar Transistor for High-Voltage Driver Applications. The transistor is subdivided into two groups, D and E, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Absolute Maximum Ratings (Ta = 25oC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Bas