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Datasheet C30 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 130 | C300 | MONOLITHIC WIDEBAND CRT DISTORTION CORRECTION DEVICE
intronies
MONOLITHIC WIDEBAND CRT DISTORTION CORRECTION DEVICE
FEATURES r 16 pin ceramic dip (C300 Series) r Minimum of external components required o Easily adjusts for yoke errors o Accuracy better than 0.590 Max (C312) o Bandwidth compatible with l0MHz systems r Both geometr |
 Intronice |
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| 129 | C3000 | NPN Transistor - 2SC3000 Ordering number:EN866C
Features
· FBET series. · High fT and small Cre.
NPN Epitaxial Planar Silicon Transistor
2SC3000
HF Amplifier Applications
Package Dimensions
unit:mm 2003A
[2SC3000]
JEDEC : TO-92 EIAJ : SC-43
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Coll |
 Sanyo |
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| 128 | C3011 | NPN Transistor - 2SC3011 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3011
2SC3011
UHF~C Band Low Noise Amplifier Applications
Unit: mm
· High gain: |S21e|2 = 12dB (typ.) · Low noise figure: NF = 2.3dB (typ.), f = 1 GHz · High fT: fT = 6.5 GHz
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base v |
 Toshiba |
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| 127 | C3012 | NPN Transistor - 2SC3012 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3012
DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1232 ·High transition frequency APPLICATIONS ·Audio frequency power amplifier.
PINNING
1 2 3 Base
PIN
DESCRIPTION
Collector;conne |
 ETC |
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