No | Part number | Description ( Function ) | Manufacturers | |
32 | C2703 | NPN Transistor - 2SC2703 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2703 Audio Power Amplifier Applications 2SC2703 Unit: mm • High DC current gain: hFE = 100 to 320 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperatur |
Toshiba |
|
31 | C2705 | NPN Transistor - 2SC2705 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2705 Audio Frequency Amplifier Applications 2SC2705 Unit: mm • Small collector output capacitance: Cob = 1.8 pF (typ.) • High transition frequency: fT = 200 MHz (typ.) • Complementary to 2SA1145. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-e |
Toshiba Semiconductor |
|
30 | C2710 | NPN Transistor - 2SC2710 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2710 2SC2710 For Audio Amplifier Applications Unit: mm · High DC current gain: hFE (1) = 100~320 · Complementary to 2SA1150 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction te |
Toshiba |
|
29 | C2712 | NPN Transistor - 2SC2712 2SC2712 3 1 2 SOT-23 WEITRON http://www.weitron.com.tw 2SC2712 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC= 2 mAdc, VCE= 6.0 Vdc) Collector-Emitter Saturation Voltage (IC= 100 mAdc, IB= 10mAdc) Output Capacitance (VCB =10Vdc, |
Weitron Technology |
|
28 | C2712 | NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER,LOCAL OSCILATOR OF FM/VHF TUNER High Current Gain Bandwidth Product fT=600MHz 2SC2715 SOT-23 1 1. 2.4 1.3 3 2 1.BASE 2.EMITTER 3.COLLECTOR 2.9 1.9 0.95 0.95 0.4 Unit:mm ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Ta= |
WEJ |
|
27 | C2713 | NPN Transistor - 2SC2713 2SC2713 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2713 Audio Frequency General Purpose Amplifier Applications High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SA1163 • Small package Unit: mm Absolute Maxim |
Toshiba |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |