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C26 PDF Datasheet

The C26 is . It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
37 C2610
NPN Transistor - 2SC2610

2SC2610 Silicon NPN Triple Diffused Application • High voltage amplifier • TV Video output Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) REJ03G0700-0200 (Previous ADE-208-1068) Rev.2.00 Aug.10.2005 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cu

Renesas
Renesas
pdf
36 C2611
NPN Transistor - 2SC2611

2SC2611 Silicon NPN Triple Diffused Application High voltage amplifier TV VIDEO output Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature

Hitachi Semiconductor
Hitachi Semiconductor
pdf
35 C2611
TRANSISTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors TO¡ª 92 C2611 FEATURES Power dissipation PCM : 0.75 Collector current ICM : 0.2 TRANSISTOR£¨NPN £© W£¨ Tamb=25¡æ£© A 1. BASE 2.COLLECTOR Collector-base voltage V(BR)CBO : 600 3. EMITTER 1 2 3 V Operating and storage junction temperature range T J

Jiangsu Changjiang Electronics
Jiangsu Changjiang Electronics
pdf
34 C2611
Plastic-Encapsulated Transistors

Transys Electronics L I M I T E D TO-251 Plastic-Encapsulated Transistors C 2611 FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER 2. COLLECTOR 3. BASE TRANSISTOR (NPN) TO-251 Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTI

TRANSYS Electronics
TRANSYS Electronics
pdf
33 C2612
NPN Transistor - 2SC2612

2SC2612 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-220AB 1 23 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dissipation Junction temperature Storage temperature Note: 1. Va

Hitachi Semiconductor
Hitachi Semiconductor
pdf
32 C2615
NPN Transistor - 2SC2615

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2615 DESCRIPTION ·With TO-247 package ·High voltage,high speed APPLICATIONS ·For high voltage,high speed and high power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-247) and symbol DESCRIPTION Absolu

SavantIC
SavantIC
pdf

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List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
pdf

 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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