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Datasheet C1815 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 11 | C1815 | NPN Plastic-Encapsulate Transistors C1815
NPN Plastic-Encapsulate Transistors
P b Lead(Pb)-Free
FEATURES Power dissipation
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol
Parameter
Value
Units
VCBO VCEO VEBO IC
Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous
60 V 50 |
 WEITRON |
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| 10 | C1815 | NPN Transistor C1815
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN)
FEATURES
* Power dissipation
PCM :
0.2 W (Tamb=25OC)
* Collector current
ICM :
0.15
mA
* Collector-base voltage
V(BR)CBO : 60
V
* Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC
MECHANICAL DATA
* Case: Molded pl |
 RECTRON |
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| 9 | C1815 | NPN Plastic Encapsulated Transistor Elektronische Bauelemente
C1815
200 mW, 150 mA, 60 V NPN Plastic Encapsulated Transistor
FEATURE
Power Dissipation
MARKING: HF
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
Collector
3
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified |
 SeCoS |
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| 8 | C1815 | Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications) 2SC1815
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC1815
Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications
• • High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 |
 Toshiba Semiconductor |
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