| No | Part number | Description ( Function ) | Manufacturers | |
| 11 | C1815 | Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications) 2SC1815 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • • High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • • Low no |
 Toshiba Semiconductor |
|
| 10 | C1815 | Plastic Encapsulate Transistors JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 FEATURES Power dissipation MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PD TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Junction and Sto |
 Jiangsu Changjiang Electronics Technology |
|
| 9 | C1815 | Silicon NPN Epitaxial Transistor C1815 C1815 Silicon NPN Epitaxial Transistor Description : The C1815 is designed for audio frequency general purpose amplifier applications and driver stage amplifier applications Features: ●Excellent hFE Linearity ●Complementary to A1015 Chip Appearance Chip Size Chip Thickness Bonding Pad Size Front Metal Backside Metal Scribe line width Wafer Size Ba |
 Shanghai |
|
| 8 | C1815 | SOT-23 Plastic-Encap sulate Transistors WILLAS SOT-23 Plastic-Encap sulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE FM120-M &115 THRU FM1200- Pb Free Prod Features • Batch process design, excellent power dissipation offers TRANSISTO•RLboe(wtNt epPrrNroef)vi leerssuerlfeaackeamgoeucnutrerde natpapnl idc at ht ieornmianlorredsei sr ttaon c e . FEATURES • optim |
 WILLAS |
|
| 7 | C1815 | NPN Plastic-Encapsulate Transistors C1815 NPN Plastic-Encapsulate Transistors P b Lead(Pb)-Free FEATURES Power dissipation MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous 60 V 50 V 5V 150 mA PD Total Device Dissipation 400 mW TJ, Tstg Junction and Storage |
 WEITRON |
|
| 6 | C1815 | NPN Transistor C1815 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.15 mA * Collector-base voltage V(BR)CBO : 60 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C gu |
 RECTRON |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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