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C1815 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
11 C1815
SOT-23 Plastic-Encap sulate Transistors

WILLAS SOT-23 Plastic-Encap sulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE FM120-M &115 THRU FM1200- Pb Free Prod Features • Batch process design, excellent power dissipation offers TRANSISTO•RLboe(wtNt epPrrNroef)vi leerssuerlfeaackeamgoeucnutrerde natpapnl idc at ht ieornmianlorredsei sr ttaon c e . FEATURES • optim

WILLAS
WILLAS
pdf
10 C1815
Silicon NPN Epitaxial Transistor

C1815 C1815 Silicon NPN Epitaxial Transistor Description : The C1815 is designed for audio frequency general purpose amplifier applications and driver stage amplifier applications Features: ●Excellent hFE Linearity ●Complementary to A1015 Chip Appearance Chip Size Chip Thickness Bonding Pad Size Front Metal Backside Metal Scribe line width Wafer Size Ba

Shanghai
Shanghai
pdf
9 C1815
Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications)

2SC1815 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • • High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • • Low no

Toshiba Semiconductor
Toshiba Semiconductor
pdf
8 C1815
Plastic Encapsulate Transistors

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 FEATURES Power dissipation MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PD TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Junction and Sto

Jiangsu Changjiang Electronics Technology
Jiangsu Changjiang Electronics Technology
pdf
7 C1815
NPN Transistor

C1815 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.15 mA * Collector-base voltage V(BR)CBO : 60 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C gu

RECTRON
RECTRON
pdf
6 C1815
NPN Plastic-Encapsulate Transistors

C1815 NPN Plastic-Encapsulate Transistors P b Lead(Pb)-Free FEATURES Power dissipation MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous 60 V 50 V 5V 150 mA PD Total Device Dissipation 400 mW TJ, Tstg Junction and Storage

WEITRON
WEITRON
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