No | Part number | Description ( Function ) | Manufacturers | |
33 | BUZ90 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) BUZ 90 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 90 VDS 600 V ID 4.5 A RDS(on) 1.6 Ω Package TO-220 AB Ordering Code C67078-S1321-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 4.5 Unit A ID IDpuls 18 TC = 28 °C Pulsed drain current TC = 25 °C Avalanche current,limit |
Siemens Semiconductor Group |
|
32 | BUZ900 | (BUZ900 / BUZ901) N-CHANNEL POWER MOSFET MAGNA TEC 25.0 +0.1 -0.15 BUZ900 BUZ901 MECHANICAL DATA Dimensions in mm N–CHANNEL POWER MOSFET 8.7 Max. 1.50 Typ. 11.60 ± 0.3 10.90 ± 0.1 POWER MOSFETS FOR AUDIO APPLICATIONS 30.2 ± 0.15 Ø 20 M ax. 39.0 ± 1.1 16.9 ± 0.15 1 2 Ø 1.0 FEATURES • HIGH SPEED SWITCHING • N–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH |
Magna |
|
31 | BUZ900 | Trans MOSFET N-CH 160V 8A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
|
30 | BUZ900DP | (BUZ900DP / BUZ901DP) N-CHANNEL POWER MOSFET MAGNA TEC 20.0 5.0 BUZ900DP BUZ901DP MECHANICAL DATA Dimensions in mm 3.3 Dia. N–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2.0 2 3 2.0 1.0 • HIGH SPEED SWITCHING • N–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING 1.2 0.6 2.8 3.4 • ENHANCEMENT MODE • INTEGRAL PROTECTIO |
ETC |
|
29 | BUZ900P | N-CHANNEL POWER MOSFET MAGNA TEC 4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) BUZ900P BUZ901P MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS 3.55 (0.140) 3.81 (0.150) 4.50 (0.177) M ax. 1 2 3 1.65 (0.065) 2.13 (0.084) 2.87 (0.113) 3.12 (0.123) FEATURES � |
Magna |
|
28 | BUZ900X4S | NEW PRODUCT UNDER DEVELOPMENT MAGNA TEC 3 1 .5 (1 .2 4 0 ) 3 1 .7 (1 .2 4 8 ) 7 .8 (0 .3 0 7 ) 8 .2 (0 .3 2 2 ) 1 1 .8 (0 .4 6 3 ) 1 2 .2 (0 .4 8 0 ) W = 4 .1 (0 .1 6 1 ) 4 .3 (0 .1 6 9 ) H= 4 .8 (0 .1 8 7 ) 4 .9 (0 .1 9 3 ) (4 places) 8 .9 (0 .3 5 0 ) 9 .6 (0 .3 7 8 ) BUZ900X4S BUZ901X4S NEW PRODUCT UNDER DEVELOPMENT MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET Hex Nut M 4 (4 pla |
ETC |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |