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BUZ73 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
11 BUZ73
SIPMOS Power Transistor

BUZ 73 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 73 VDS 200 V ID 7A RDS(on) 0.4 Ω Package TO-220 AB Ordering Code C67078-S1317-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 7 Unit A ID IDpuls 28 TC = 28 °C Pulsed drain current TC = 25 °C Avalanche current,limited by

Siemens Semiconductor Group
Siemens Semiconductor Group
pdf
10 BUZ73
SIPMOS Power Transistor

SIPMOS ® Power Transistor BUZ 73 • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS 200 V ID 7A RDS(on) 0.4 Ω Package Ordering Code BUZ 73 TO-220 AB C67078-S1317-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 28 ˚C ID A 7 Pulsed drain current TC = 25 ˚C IDpuls 28 IAR EAR EAS Avalan

Infineon Technologies AG
Infineon Technologies AG
pdf
9 BUZ73A
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

BUZ 73 A SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 73 A VDS 200 V ID 5.5 A RDS(on) 0.6 Ω Package TO-220 AB Ordering Code C67078-S1317-A3 Maximum Ratings Parameter Continuous drain current Symbol Values 5.5 Unit A ID IDpuls 22 TC = 37 °C Pulsed drain current TC = 25 °C Avalanche current,l

Siemens Semiconductor Group
Siemens Semiconductor Group
pdf
8 BUZ73A
SIPMOS Power Transistor

SIPMOS ® Power Transistor BUZ 73A • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS 200 V ID 5.5 A RDS(on) 0.6 Ω Package Ordering Code BUZ 73 A TO-220 AB C67078-S1317-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 37 ˚C ID A 5.5 Pulsed drain current TC = 25 ˚C IDpuls 22 IAR EAR EAS

Infineon Technologies AG
Infineon Technologies AG
pdf
7 BUZ73A
N-Channel Enhancement Mode Power MOS Transistors

SEMICONDUCTORS BUZ73A N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE This is an N-channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This ty

Comset Semiconductors
Comset Semiconductors
pdf
6 BUZ73A
5.8A/ 200V/ 0.600 Ohm/ N-Channel Power MOSFET

BUZ73A Semiconductor Data Sheet October 1998 File Number 2263.1 5.8A, 200V, 0.600 Ohm, N-Channel Power MOSFET Features • 5.8A, 200V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 0.600Ω (BUZ73 field effect transistor designed for applications such as • SOA is Power Dissipation Limited A) switching regulators, switching converters, m

Intersil Corporation
Intersil Corporation
pdf



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