pdf datasheet site - dataSheet39.com


BUZ11 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
15 BUZ11
Trans MOSFET N-CH 50V 33A 3-Pin(3+Tab) TO-220

New Jersey Semiconductor
New Jersey Semiconductor
pdf
14 BUZ11
SIPMOS Power Transistorm (N channel Enhancement mode Avalanche-rated)

BUZ 11 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 11 VDS 50 V ID 30 A RDS(on) 0.04 Ω Package TO-220 AB Ordering Code C67078-S1301-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 30 Unit A ID IDpuls 120 TC = 29 °C Pulsed drain current TC = 25 °C Avala

Siemens Semiconductor Group
Siemens Semiconductor Group
pdf
13 BUZ11
N-Channel Power MOSFET

Data Sheet BUZ11 September 2013 File Number 2253.2 N-Channel Power MOSFET 50V, 30A, 40 mΩ This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive

Fairchild Semiconductor
Fairchild Semiconductor
pdf
12 BUZ11
N - CHANNEL 50V - 0.03W - 33A TO-220 STripFET] MOSFET

® BUZ11 N - CHANNEL 50V - 0.03Ω - 33A TO-220 STripFET™ MOSFET T YPE BUZ 11 s s s s s V DSS 50 V R DS(o n) < 0.04 Ω ID 33 A TYPICAL RDS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE 3 1 2 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CO

STMicroelectronics
STMicroelectronics
pdf
11 BUZ11
30A/ 50V/ 0.040 Ohm/ N-Channel Power MOSFET

BUZ11 Data Sheet June 1999 File Number 2253.2 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive pow

Intersil Corporation
Intersil Corporation
pdf
10 BUZ110S
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)

BUZ 110 S SPP80N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V ID 80 A RDS(on) 0.012 Ω Package Ordering Code BUZ 110 S TO-220 AB Q67040-S4005-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain cur

Siemens Semiconductor Group
Siemens Semiconductor Group
pdf



Share Link

[1] [2] [3] 

DataSheet39.com offers a large amount of data sheet, You can free PDF files download.
The updated every day, always provide the best quality and speed.

Sitemap Link

Index : 1N  2SC  74H  AD  BC  IRF  LM  TD  New  Sitemap  BUZ


DataSheet39.com    |   2019    |  Privacy Policy  |  Contact Us