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Datasheet BUT11AF Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | BUT11AF | POWER TRANSISTOR 5.0 AMPERES 450 VOLTS 40 WATTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BUT11AF/D
Full Pak High Voltage NPN Power Transistor
For Isolated Package Applications
The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest s |
 Motorola Inc |
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| 5 | BUT11AF | Silicon Diffused Power Transistor Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11AF
GENERAL DESCRIPTION
High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated mounting base,intended for use in converters, inverters, switching regulators |
 NXP Semiconductors |
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| 4 | BUT11AF | SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) BUT11AF
GENERAL DESCRIPTION
SILICON DIFFUSED POWER TRANSISTOR
Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits.
QUICK REFERENCE DATA
SYMBOL
TO-220F
CONDITIONS VBE = 0V MIN MAX 1000 450 5 10 40 1.5 UNIT V V A A W V A V s
VCESM VC |
 Wing Shing Computer Components |
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| 3 | BUT11AF | High Voltage Power Switching Applications BUT11F/11AF
BUT11F/11AF
High Voltage Power Switching Applications
1
TO-220F 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BUT11F : BUT11AF VCEO Collector-Emitter Voltage : BUT11F : BUT11AF Emit |
 Fairchild Semiconductor |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
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