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BUT11AF PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
6 BUT11AF
SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION BUT11F BUT11AF Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum

SavantIC
SavantIC
pdf
5 BUT11AF
SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)

BUT11AF GENERAL DESCRIPTION SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits. QUICK REFERENCE DATA SYMBOL TO-220F CONDITIONS VBE = 0V MIN MAX 1000 450 5 10 40 1.5 UNIT V V A A W V A V s VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER Collector-emitter voltage peak valu

Wing Shing Computer Components
Wing Shing Computer Components
pdf
4 BUT11AF
Silicon Diffused Power Transistor

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AF GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Pto

NXP
NXP
pdf
3 BUT11AF
POWER TRANSISTOR 5.0 AMPERES 450 VOLTS 40 WATTS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUT11AF/D Full Pak High Voltage NPN Power Transistor For Isolated Package Applications The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art bipolar fabrication techniques to provide excellent switching, h

Motorola  Inc
Motorola Inc
pdf
2 BUT11AF
High Voltage Power Switching Applications

BUT11F/11AF BUT11F/11AF High Voltage Power Switching Applications 1 TO-220F 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BUT11F : BUT11AF VCEO Collector-Emitter Voltage : BUT11F : BUT11AF Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current

Fairchild Semiconductor
Fairchild Semiconductor
pdf
1 BUT11AF
High Voltage NPN Power Transistor

ON Semiconductort FULL PAKt High Voltage NPN Power Transistor For Isolated Package Applications The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art bipolar fabrication techniques to provide excellent switching, high voltage capability and low saturation voltage.

ON Semiconductor
ON Semiconductor
pdf



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