No | Part number | Description ( Function ) | Manufacturers | |
1 | BU4522DX | Silicon Diffused Power Transistor Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4522DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features excep |
NXP Semiconductors |
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Recommended search results related to BU4522DX |
Part No | Description ( Function) | Manufacturers | |
BU4522AF | Silicon Diffused Power Transistor Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour TV receiv |
NXP Semiconductors |
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BU4522AF | Silicon NPN Power Transistor INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU4522AF DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits o |
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BU4522AX | Silicon Diffused Power Transistor Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4522AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour TV receiv |
NXP Semiconductors |
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BU4522DF | Silicon Diffused Power Transistor Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4522DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for u |
NXP Semiconductors |
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2SC4522 | NPN Epitaxial Planar Silicon Transistors Ordering number:EN3141A NPN Epitaxial Planar Silicon Transistors 2SC4522 High-Speed Switching Applications Features · Adoption of FBET, MBIT process. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed. Package Dimensions unit:mm |
Sanyo Semicon Device |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |