| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | BU326S | Bipolar NPN Device BU326S Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 (0.043) 22.23 (0.875) max. 12 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) |
 Semelab |
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Recommended search results related to BU326S |
| Part No | Description ( Function) | Manufacturers | |
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| BU326 | SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU326 BU326A DESCRIPTION ·With TO-3 package ·High voltage;high speed ·Low collector saturation voltage. APPLICATIONS ·Intended for operating in CTV receiver’s chopper supplie |
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| BU326A | HIGH VOLTAGE NPN SILICON POWER TRANSISTOR ® BU326A HIGH VOLTAGE NPN SILICON POWER TRANSISTOR s s s STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED APPLICATIONS: POWER SUPPLIES s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s 1 2 TO-3 DESCRIPTION The BU326A is a silicon multiepitaxial mesa |
 ST Microelectronics |
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| BU326A | NPN SILICON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS) BU326A NPN SILICON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS (Ta=25 °C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C) Junction Temperature |
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List of most widely used semiconductors
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 Vishay |
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