No | Part number | Description ( Function ) | Manufacturers | |
9 | BU323 | 10-Ampere N-P-N Monolithic Darlington Power Transistors
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GE Solid State |
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8 | BU323 | Silicon Darlington NPN Power Transistor INCHANGE Semiconductor isc Product Specification isc Silicon Darlington NPN Power Transistor BU323 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 350V(Min.) ·High Reliability APPLICATIONS ·Automotive ignition ·Switching regulator ·Motor control applications ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARA |
Inchange Semiconductor |
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7 | BU323A | 16 AMPERE PEAK POWER TRANSISTOR DARLINGTON NPN SILICON 400 VOLTS 175 WATTS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BU323A/D NPN Silicon Power Darlington Transistor The BU323A is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • VCE Sat Specified at –40_C = 2.0 V Max. at IC = 6 A. • Photoglass Passivation for Reliability and Stability. BASE COLLECTOR |
Motorola Inc |
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6 | BU323A | 10-Ampere N-P-N Monolithic Darlington Power Transistors
|
GE Solid State |
|
5 | BU323A | SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU323A DESCRIPTION ·With TO-3 package ·DARLINGTON APPLICATIONS ·Designed for automotive ignition,switching regulator and motor control applications. PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum rat |
SavantIC |
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4 | BU323AP | DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BU323AP/D NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage — VCER(sus) = 475 Vdc • 125 Watts Capability at 50 Volts • VCE Sat Specified at |
Motorola Inc |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |