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BU2462 PDF Datasheet

The BU2462 is (bu2456 - Bu2462) MICrocomputer. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 BU2462
(BU2456 - BU2462) Microcomputer

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ROHM Semiconductor
ROHM Semiconductor
pdf

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Recommended search results related to BU2462

Part No Description ( Function) Manufacturers PDF
1S2462   (1S2460 - 1S2462) GENERAL PURPOSE RECTIFIER APPLICATIONS

Toshiba Semiconductor
Toshiba Semiconductor
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2SC2462   Silicon NPN Epitaxial

2SC2462 Silicon NPN Epitaxial Application Low frequency amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC2462 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter cu

Hitachi Semiconductor
Hitachi Semiconductor
datasheet pdf
2SC2462   Silicon NPN Epitaxial

2SC2462 Silicon NPN Epitaxial REJ03G0697-0200 (Previous ADE-208-1063) Rev.2.00 Aug.10.2005 Application Low frequency amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings (Ta = 25°C) Item Colle

Renesas
Renesas
datasheet pdf
2SC2462   Silicon NPN Epitaxial

SMD Type Silicon NPN Epitaxial 2SC2462 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 Low frequency amplifier. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute M

Kexin
Kexin
datasheet pdf
2SD2462   NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

2SD2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2462 Power Amplifier Applications Unit: mm • • • High DC current gain: hFE (1) = 800 to 3200 (VCE = 5 V, IC = 0.2 A) Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA) Complementary to 2SB1

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf

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Part Number Function Manufacturers PDF
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The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
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