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BSS84 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
35 BSS84
Small Signal MOSFET

BSS84 Small Signal MOSFET P-Channel 3 DRAIN Features: *Low On-Resistance : 10 *Low Input Capacitance: 30PF *Low Out put Capacitance : 10PF *Low Threshole : 2.0V *Fast Switching Speed : 2.5ns 1 GATE Application: * DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Management in Portable and Battery etc. 2 SOURCE SOT-23 1 2 3 Maximum Ratings (TA=25

WEITRON
WEITRON
pdf
34 BSS84
SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)

BSS 84 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V Pin 1 G Type BSS 84 Type BSS 84 BSS 84 Pin 2 S Marking SPs Pin 3 D VDS -50 V ID -0.13 A RDS(on) 10 Ω Package SOT-23 Ordering Code Q62702-S568 Q67000-S243 Tape and Reel Information E6327 E6433 Maximum Ratings Parameter Drain source voltage Drain-g

Siemens Semiconductor Group
Siemens Semiconductor Group
pdf
33 BSS84
P-Channel MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETs BSS84 P-CHANNEL MOSFET V(BR)DSS RDS(on)MAX ID -50 V  8Ω@-10V  10Ω@ -5V   -0.13A   DESCRIPTION These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. FEATURE z Energy Efficient z Low Threshol

JCET
JCET
pdf
32 BSS84
P-CHANNEL MOSFET

BSS84 Rev.D Nov.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 P 沟道 MOS 场效应管。P-CHANNEL MOSFET in a SOT-23 Plastic Package. 特征 / Features 低开启电压,C-MOS 和 TTL 等电路的直接接口,开关速度快。 Low threshold voltage, Direct interface to C-MOS, TTL etc, High-speed switching. 用途 / Applications 用于电话机中的线

BLUE ROCKET ELECTRONICS
BLUE ROCKET ELECTRONICS
pdf
31 BSS84
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – SEPTEMBER 1995 7 PARTMARKING DETAIL — SP BSS84 D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Peak Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL BVDSS VGS(th) IDSS MIN. -50 -0.8 -1.5 -1 -2 -

Zetex Semiconductors
Zetex Semiconductors
pdf
30 BSS84
P-channel enhancement mode vertical D-MOS transistor

DISCRETE SEMICONDUCTORS DATA SHEET BSS84 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1995 Apr 07 File under Discrete Semiconductors, SC13b 1997 Jun 18 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor FEATURES • Low threshold voltage • Direct interface to C-MOS, TTL, etc

NXP
NXP
pdf


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