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BSS123 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
18 BSS123
Small-Signal Transistor

BSS 123 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Type BSS 123 Type BSS 123 BSS 123 VDS 100 V ID 0.17 A Ordering Code Q62702-S512 Q67000-S245 Pin 1 G Pin 2 S RDS(on) 6Ω Package SOT-23 Tape and Reel Information E6327 E6433 Marking SAs Pin 3 D Maximum Ratings Parameter Drain source voltage Drain-ga

Siemens Semiconductor Group
Siemens Semiconductor Group
pdf
17 BSS123
SIPMOS Small-Signal-Transistor

Rev. 1.0 BSS123 SIPMOS Small-Signal-Transistor Feature • N-Channel • Enhancement mode • Logic Level • dv/dt rated Product Summary VDS 100 6 0.17 SOT23 V Ω A RDS(on) ID 3 Drain pin 3 Gate pin1 Source pin 2 2 1 VPS05161 Type BSS123 BSS123 Package SOT23 SOT23 Ordering Code Q62702-S512 Q67000-S245 Tape and Reel Information E6327: 3000 pcs/reel E6433: 10000

Infineon Technologies AG
Infineon Technologies AG
pdf
16 BSS123
N-Channel MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS123 N Channel MOSFET V(BR)DSS 100 V RDS(on)MAX  6Ω@10V  10Ω@4.5V   ID 0.17A FEATURE  Surface Mount Package  High Density Cell Design for Extremely Low RDS(ON)  Voltage Controlled Small Signal Switch  Rugged and Reliable SOT-23 1. GATE 2. SOURCE 3. DRAIN APPLICATION

JCET
JCET
pdf
15 BSS123
N-CHANNEL MOSFET

BSS123 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a SOT-23 Plastic Package. 特征 / Features 极低的 RDS(ON)为高密度电池设计。 High density cell design for extremely low RDS(ON). 用途 / Applications 适用于作负载开关或脉宽调制应用。 This device is suitable for use as a l

BLUE ROCKET ELECTRONICS
BLUE ROCKET ELECTRONICS
pdf
14 BSS123
N-Channel Logic Level Enhancement Mode Field Effect Transistor

BSS123 June 2003 BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.T

Fairchild Semiconductor
Fairchild Semiconductor
pdf
13 BSS123
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – JANUARY 1996 PARTMARKING DETAIL 7 – SA BSS123 S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate-Source Voltage Peak Gate-Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL

Zetex Semiconductors
Zetex Semiconductors
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