pdf datasheet site - dataSheet39.com


BS170 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
12 BS170
TMOS FET Switching(N-Channel-Enhancement)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BS170/D TMOS FET Switching N–Channel — Enhancement 1 DRAIN BS170 2 GATE 3 SOURCE ® MAXIMUM RATINGS Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Drain Current(1) Total Device Dissipation @ TA = 25°C Operating and Storage Junction Temperature Range

Motorola  Inc
Motorola Inc
pdf
11 BS170
Small Signal MOSFET

BS170 Preferred Device Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 (TO−226) Features http://onsemi.com • Pb−Free Package is Available* MAXIMUM RATINGS Rating Drain −Source Voltage Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms) Drain Current (Note) Total Device Dissipation @ TA = 25°C Operating and Storage Ju

ON Semiconductor
ON Semiconductor
pdf
10 BS170
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

BS 170 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 S Type BS 170 Type BS 170 Pin 2 G Marking BS 170 Pin 3 D VDS 60 V ID 0.3 A RDS(on) 5Ω Package TO-92 Ordering Code Q67000-S076 Tape and Reel Information E6288 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 60 60

Siemens Semiconductor Group
Siemens Semiconductor Group
pdf
9 BS170
N-channel vertical D-MOS transistor

DISCRETE SEMICONDUCTORS DATA SHEET BS170 N-channel vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and lin

NXP
NXP
pdf
8 BS170
N-CHANNEL ENHANCEMENT MODE TRANSISTOR

BS170 N-CHANNEL ENHANCEMENT MODE TRANSISTOR Features · · · · High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown E A B Dim A B C D E TO-92 Min 4.45 4.46 12.7 0.41 3.43 2.42 1.14 Max 4.70 4.70 — 0.63 3.68 2.67 1.40 Mechanical Data · · · · Case: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208 Pin

Diodes Incorporated
Diodes Incorporated
pdf
7 BS170
N-Channel Enhancement Mode Field Effect Transistor

BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor March 2010 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while

Fairchild Semiconductor
Fairchild Semiconductor
pdf


Share Link

[1] [2] 

DataSheet39.com offers a large amount of data sheet, You can free PDF files download.
The updated every day, always provide the best quality and speed.

Sitemap Link

Index : 1N  2SC  74H  AD  BC  IRF  LM  TD  New  Sitemap  BS1


DataSheet39.com    |   2019    |  Privacy Policy  |  Contact Us