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Datasheet BS170 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 12 | BS170 | TMOS FET Switching(N-Channel-Enhancement) MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BS170/D
TMOS FET Switching
N–Channel — Enhancement
1 DRAIN
BS170
2 GATE 3 SOURCE
®
MAXIMUM RATINGS
Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Drain Current(1) Total D |
 Motorola Inc |
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| 11 | BS170 | N-channel vertical D-MOS transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BS170 N-channel vertical D-MOS transistor
Product specification File under Discrete Semiconductors, SC13b April 1995
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
DESCRIPTION N-channel enhancement mode vertical D-MOS transi |
 NXP Semiconductors |
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| 10 | BS170 | SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) BS 170
SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level
• VGS(th) = 0.8...2.0V
Pin 1 S Type BS 170 Type BS 170
Pin 2 G Marking BS 170
Pin 3 D
VDS
60 V
ID
0.3 A
RDS(on)
5Ω
Package TO-92
Ordering Code Q67000-S076
Tape and Reel Information E6288
Maxim |
 Siemens Semiconductor Group |
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| 9 | BS170 | N-Channel Enhancement Mode Field Effect Transistor BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor
March 2010
BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS tec |
 Fairchild Semiconductor |
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