No | Part number | Description ( Function ) | Manufacturers | |
43 | BS1001-7R | 100 Watt DC-DC Converters S Series 100 Watt DC-DC Converters Wide input voltage ranges from 8...385 V DC 1or 2 isolated outputs up to 48 V DC 4 kV AC I/O electric strengh test voltage LGA • Rugged electrical and mechanical design • Fully isolated outputs • Operating ambient temperature range –40...71 °C with convection cooling Selection chart Output 1 Uo nom Io nom [V DC] [A] 5.1 16 12 8 15 |
Power-One |
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42 | BS100C | PHOTODIODE FOR VISIBLE LIGHT |
Sharp Electrionic Components |
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41 | BS107 | TMOS Switching(N-Channel-Enhancement) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BS107/D TMOS Switching N–Channel — Enhancement 2 GATE 1 DRAIN BS107 BS107A ® 3 SOURCE MAXIMUM RATINGS Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Drain Current Continuous(1) Pulsed(2) Total Device Dissipation @ TA = 25°C Derate above 25°C Ope |
Motorola Inc |
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40 | BS107 | N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS DATA SHEET BS107 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DES |
NXP Semiconductors |
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39 | BS107 | SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) |
Siemens Semiconductor Group |
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38 | BS107 | N-CHANNEL ENHANCEMENT MODE TRANSISTOR BS107 N–CHANNEL ENHANCEMENT MODE TRANSISTOR Features · · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets E A TO-92 B Dim A B Min 4.45 4.46 12.7 0.41 3.43 2.42 1.14 Max 4.70 4.70 — 0.63 3.68 2.67 1.40 Mechanical Data · · · · Case: TO-92 Plastic Leads: Solderable per MIL-STD-202, Method 208 Pin Connectio |
Diodes Incorporated |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |